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| i nchange semiconductor isc website isc & iscsemi is registered tr a demark 1 isc silicon npn darlington power transistor 2 sd 972 description collector - emitter breakdown voltage - : v (br)ceo = 5 0v( min ) high dc current gain high switching speed wide area of safe ope ration minimum lot - to - lot variations for robust device performance and reliable operation applications designed for hammer drivers, audio amplifiers applications a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v ol tage 50 v v ceo collector - e mitter v oltage 50 v v ebo emitter - b ase v oltage 6 v i c collector c urrent - continuous 4 a i c p collector c urrent - peak 6 a i b base c urrent 0.2 a p c collector p ower d issipation @ t c =25 3 0 w t j junction t emperature 150 t stg storage t emperature range - 5 5 ~ 150
i nchange semiconductor isc website isc & iscsemi is registered tr a demark 2 isc silicon npn darlington power transistor 2 sd 972 electrical characteristics t c =25 v ceo (sus) collector - e mitter sustaining v olt age i c = 3 0m a ;i b = 0 5 0 v v c e( sat ) - 1 collector - e mitter s aturation v oltage i c = 2 a; i b = 8m a 1.8 v v c e( sat ) - 2 collector - e mitter s aturation v oltage i c = 4 a; i b = 4 0m a 2.5 v v be( sat ) - 1 base - e mitter s aturation v oltage i c = 2 a; i b = 8m a 2. 2 v v be( sat ) - 2 ba se - e mitter s aturation v oltage i c = 4 a; i b = 4 0m a 3 . 0 v i cbo collector c utoff c urrent v c b = 5 0v ;i e = 0 0.1 ma i c eo collector c utoff c urrent v c e = 5 0v; i b = 0 0.5 ma i ebo emitter c utoff c urrent v eb = 5 v; i c = 0 5 ma h fe - 1 dc c urrent g ain i c = 1 a ; v ce = 4 v 2000 h fe - 2 dc c urrent g ain i c = 3 a ; v ce = 4 v 1000 20000 |
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